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| LET21030C RF POWER TRANSISTORS Ldmos Enhanced Technology TARGET DATA Designed for GSM / EDGE / IS-97 / WCDMA applications * EXCELLENT THERMAL STABILITY * POUT = 30 W with 11 dB gain @ 2170 MHz * BeO FREE PACKAGE * INTERNAL INPUT MATCHING * ESD PROTECTION CASE 465E-03, STYLE 1 epoxy sealed ORDER CODE LET21030C BRANDING LET21030C DESCRIPTION The LET21030C is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 2.1 GHz. The LET21030C is designed for high gain and broadband performance operating in common source mode at 26 V. Its internal matching makes it ideal for base station applications requiring high linearity. PIN CONNECTION 1 3 2 1. Drain 2. Gate 3. Source ABSOLUTE MAXIMUM RATINGS (TCASE = 25 C) Symbol V(BR)DSS VGS ID PDISS Tj TSTG Drain-Source Voltage Gate-Source Voltage Drain Current Power Dissipation (@ Tc = 70 C) Max. Operating Junction Temperature Storage Temperature Parameter Value 65 -0.5 to +15 4 65 200 -65 to +200 Unit V V A W C C THERMAL DATA Rth(j-c) Junction -Case Thermal Resistance 2 C/W January, 24 2003 1/4 LET21030C ELECTRICAL SPECIFICATION (TCASE = 25 C) STATIC (Per Section) Symbol V(BR)DSS IDSS IGSS VGS(Q) VDS(ON) GFS CISS* COSS CRSS VGS = 0 V VGS = 0 V VGS = 5 V VDS = 28 V VGS = 10 V VDS = 10 V VGS = 0 V VGS = 0 V VGS = 0 V ID = 20 A VDS = 26 V VDS = 0 V ID = TBD ID = 1 A ID = 1 A VDD = 26 V VDD = 26 V VDS = 26 V f = 1 MHz f = 1 MHz f = 1 MHz 2 0.29 2 TBD TBD TBD Test Conditions Min. 65 1 1 4.5 0.4 Typ. Max. Unit V A A V V mho pF pF pF * Including input matching capacitor in package ? Symbol Test Conditions Min. Typ. Max. Unit DYNAMIC (f = 2170 MHz) POUT(1) D (1) VDD = 26 V VDD = 26 V IDQ = TBD IDQ = TBD 30 45 35 50 10:1 W % VSWR Load mismatch VDD = 26 V POUT = 30 W ALL PHASE ANGLES DYNAMIC (f = 2110 - 2170 MHz) POUT(1) D (1) VDD = 26 V VDD = 26 V VDD = 26 V IDQ = TBD IDQ = TBD IDQ = TBD mA POUT = 30 W 25 40 30 45 11 5 20 W % dB W % GP POUT(W-CDMA)(2) D(W-CDMA)(2) ACPR -45 dBc ACPR -45 dBc (1) 1 dB Compression point (2) +/- 5 MHz offset; 3.84 MHz Bandwitdh ESD PROTECTION CHARACTERISTICS Test Conditions Human Body Model Machine Model Class 2 M3 2/4 LET21030C 465E-03 MECHANICAL DATA 3/4 LET21030C Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics (R) 2003 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 4/4 |
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